| PART |
Description |
Maker |
| MAAPSS0071SMB MAAPSS0071TR-3000 MAAPSS0071-15 |
DECT Power Amplifier 1880 - 1930 MHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| CGY2030MC1 |
DECT 500 mW power amplifier
|
Philips
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| BFP136 BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BGF1801-10 |
GSM1800 EDGE power module 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PH97005 |
Low cost DECT Po wer Amplifier
|
NXP Semiconductors
Philips Semiconductors
Fuji Electric
|
| AWB7122P7 AWB7122P8 AWB7122P9 |
1805 MHz to 1880 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions Inc.
|
| T2802NBSP T2802 |
2.5 GHz DECT transceiver IC with integrated VCO
2.4-GHz DECT Non-Blind-Slot RF Transceiver
|
Atmel Corp
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
